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MOSFET
STMicroelectronics
PD57006-E

MOSFET, N-CH, 65V, 1A, PowerSO-10RF

MOSFET, N-CH, 65V, 1A, PowerSO-10RF
MOSFET STMicroelectronics PD57006-E
Код PD57006-E
Производитель STMicroelectronics
Mounting Surface Mount
Maximum Operating Temperature 165°C
Minimum Operating Temperature -65°C
Output Power 6W
Product Height 3.5mm
Product Length 7.5mm
Category RF MOSFET
Maximum Power Dissipation 20000mW
Product Width 9.4mm
Supplier Package PowerSO-10RF (Formed lead)
Configuration Single
Number of Elements per Chip 1
Typical Power Gain 15dB
Channel Type N
Maximum Drain Source Voltage 65V
Maximum Gate Source Voltage ±20V
Maximum Continuous Drain Current 1A
Channel Mode Enhancement
Typical Input Capacitance @ Vds 27pF
Maximum Frequency 945MHz
Typical Drain Efficiency 50%
Cрок поставки Уточняйте radioniks.com@mail.ru
Условия поставки Под заказ
Артикул производителя PD57006-E
 
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