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Память FLASH
STMicroelectronics
M29W640DB90N6E

Flash memory,M29W640DB90N6 8Mbx8 64Mb

Flash memory,M29W640DB90N6 8Mbx8 64Mb
Память FLASH STMicroelectronics M29W640DB90N6E
Код M29W640DB90N6E
Производитель STMicroelectronics
Mounting Surface Mount
Maximum Operating Temperature 85°C
Minimum Operating Temperature -40°C
Product Height 1
Product Length 12
Interface Type Parallel
Pin Count 48
Product Width 18.4
Supplier Package TSOP
Typical Operating Supply Voltage 3, 3.3V
Architecture Sectored
Address Bus Width 23/22Bit
Density 64MBit
Maximum Operating Current 10mA
Maximum Random Access Time 90ns
Number of Bits per Word 8/16Bit
Programming Voltage 2.7 → 3.6, 12V
Timing Type Asynchronous
Block Organization Asymmetrical
Boot Block Yes
Cell Type NOR
Command Compatible Yes
ECC Support No
Erase Suspend/Resume Modes Support Yes
Location Of Boot Block Bottom
Number of Words 8M/4M
OE Access Time 35
Program Current 20mA
Sector Size 8KByte x 8, 64KByte x 127
Simultaneous Read/Write Support No
Support of Common Flash Interface Yes
Support of Page Mode No
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Условия поставки Под заказ
Артикул производителя M29W640DB90N6E
 
Цена Уточняйте: radioniks.com@mail.ru
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