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Память FLASH
STMicroelectronics
M29DW323DB70N6E

Flash Mem,32M Dual Bk,Boot Blk,3V,TSOP48

Flash Mem,32M Dual Bk,Boot Blk,3V,TSOP48
Память FLASH STMicroelectronics M29DW323DB70N6E
Код M29DW323DB70N6E
Производитель STMicroelectronics
Mounting Surface Mount
Maximum Operating Temperature 85°C
Minimum Operating Temperature -40°C
Product Height 1
Product Length 12
Interface Type Parallel
Pin Count 48
Product Width 18.4
Supplier Package TSOP
Typical Operating Supply Voltage 3, 3.3V
Architecture Sectored
Address Bus Width 22/21Bit
Density 32MBit
Maximum Operating Current 10mA
Maximum Random Access Time 70ns
Number of Bits per Word 8/16Bit
Programming Voltage 2.7 → 3.6, 11.5 → 12.5V
Timing Type Asynchronous
Block Organization Asymmetrical
Boot Block Yes
Cell Type NOR
Command Compatible Yes
ECC Support No
Erase Suspend/Resume Modes Support Yes
Location Of Boot Block Bottom
Number of Words 4M/2M
OE Access Time 30
Program Current 20mA
Sector Size 8KByte x 8, 64KByte x 63
Simultaneous Read/Write Support No
Support of Common Flash Interface Yes
Support of Page Mode No
Bank Size 8/24Mb
Number of Banks 2
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Артикул производителя M29DW323DB70N6E
 
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