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Память FLASH
S29GL01GP11TFIR1

Flash,1Gb,110ns,S29GL01GP11TFIR1

Flash,1Gb,110ns,S29GL01GP11TFIR1
Память FLASH S29GL01GP11TFIR1
Код S29GL01GP11TFIR1
Производитель
Mounting Surface Mount
Maximum Operating Temperature 85°C
Minimum Operating Temperature -40°C
Product Height 1
Product Length 14
Interface Type Parallel
Pin Count 56
Product Width 18.4
Supplier Package TSOP
Typical Operating Supply Voltage 3, 3.3V
Architecture Sectored
Address Bus Width 27/26Bit
Density 1GBit
Maximum Operating Current 110mA
Maximum Random Access Time 110ns
Number of Bits per Word 8/16Bit
Programming Voltage 3 → 3.6, 11.5 → 12.5V
Timing Type Asynchronous
Block Organization Symmetrical
Boot Block No
Cell Type NOR
Command Compatible No
ECC Support No
Erase Suspend/Resume Modes Support Yes
Number of Words 128M/64M
OE Access Time 25
Program Current 90mA
Sector Size 128KByte x 1024
Simultaneous Read/Write Support No
Support of Common Flash Interface Yes
Support of Page Mode Yes
Maximum Page Access Time 25ns
Page Size 8Word/16Byte
Cрок поставки Уточняйте radioniks.com@mail.ru
Условия поставки Под заказ
Артикул производителя S29GL01GP11TFIR1
 
Цена Уточняйте: radioniks.com@mail.ru
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