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MOSFET
ON Semiconductor
BS108G

N-channel MOSFET,BS108 0.23A 200V

N-channel MOSFET,BS108 0.23A 200V
MOSFET ON Semiconductor BS108G
Код BS108G
Производитель ON Semiconductor
Mounting Through Hole
Maximum Operating Temperature 150°C
Minimum Operating Temperature -55°C
Product Height 5.33
Product Length 5.2
Category Small Signal
Product Width 4.19
Supplier Package TO-92
Configuration Single
Number of Elements per Chip 1
Channel Type N
Maximum Drain Source Voltage 200V
Maximum Gate Source Voltage ±20V
Maximum Continuous Drain Current 0.25A
Channel Mode Enhancement
Maximum Drain Source Resistance
Typical Turn-Off Delay Time 15ns
Typical Turn-On Delay Time 15ns
Cрок поставки Уточняйте radioniks.com@mail.ru
Условия поставки Под заказ
Артикул производителя BS108G
 
Цена Уточняйте: radioniks.com@mail.ru
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