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MOSFET
International Rectifier
IRFB4110PBF

100V Single N-Channel HEXFET,IRFB4110PBF

100V Single N-Channel HEXFET,IRFB4110PBF
MOSFET International Rectifier IRFB4110PBF
Код IRFB4110PBF
Производитель International Rectifier
Mounting Through Hole
Maximum Operating Temperature 175°C
Minimum Operating Temperature -55°C
Product Height 9.02
Product Length 10.66
Category Power MOSFET
Product Width 4.82
Supplier Package TO-220AB
Configuration Single
Typical Fall Time 88ns
Typical Rise Time 67ns
Number of Elements per Chip 1
Channel Type N
Maximum Drain Source Voltage 100V
Maximum Gate Source Voltage ±20V
Maximum Continuous Drain Current 180A
Channel Mode Enhancement
Maximum Drain Source Resistance 0.0045Ω
Typical Turn-Off Delay Time 78ns
Typical Turn-On Delay Time 25ns
Cрок поставки Уточняйте radioniks.com@mail.ru
Условия поставки Под заказ
Артикул производителя IRFB4110PBF
 
Цена Уточняйте: radioniks.com@mail.ru
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