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MOSFET
International Rectifier
IRF6603

N-channel MOSFET,IRF6603 27A 30V

N-channel MOSFET,IRF6603 27A 30V
MOSFET International Rectifier IRF6603
Код IRF6603
Производитель International Rectifier
Mounting Surface Mount
Maximum Operating Temperature 150°C
Minimum Operating Temperature -40°C
Product Height 0.6
Product Length 5.45
Category Power MOSFET
Product Width 5.05
Supplier Package Direct-FET MT
Configuration Single; Dual Drain, Dual Source
Typical Fall Time 71ns
Typical Rise Time 9.9ns
Number of Elements per Chip 1
Channel Type N
Maximum Drain Source Voltage 30V
Maximum Gate Source Voltage ±20V
Maximum Continuous Drain Current 27A
Channel Mode Enhancement
Maximum Drain Source Resistance 0.0034Ω
Typical Turn-Off Delay Time 24ns
Typical Turn-On Delay Time 20ns
Cрок поставки Уточняйте radioniks.com@mail.ru
Условия поставки Под заказ
Артикул производителя IRF6603
 
Цена Уточняйте: radioniks.com@mail.ru
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