Быстрый поиск

Шаг 1: Выберите производителя     
     
Шаг 2: Выберите код товара
Версия для печати

Память DRAM
Hynix
H5MS5122DFR-E3

Mobile DDR 512M (x32) FBGA

Mobile DDR 512M (x32) FBGA
Память DRAM Hynix H5MS5122DFR-E3
Код H5MS5122DFR-E3
Производитель Hynix
Type DDR SDRAM
Mounting Surface Mount
Maximum Operating Temperature 85°C
Minimum Operating Temperature -30°C
Product Height 1mm
Product Length 13mm
Interface Type LVCMOS
Pin Count 90
Product Width 8mm
Supplier Package FBGA
Maximum Operating Supply Voltage 1.95V
Minimum Operating Supply Voltage 1.7V
Typical Operating Supply Voltage 1.8V
Data Bus Width 32Bit
Density 512MBit
Maximum Clock Rate 200MHz
Maximum Operating Current 50mA
Number of I/O Lines 32Bit
Number of Internal Banks 4
Number of Words per Bank 4M
Organization 16Mx32
Cрок поставки Уточняйте radioniks.com@mail.ru
Условия поставки Под заказ
Артикул производителя H5MS5122DFR-E3
 
Цена Уточняйте: radioniks.com@mail.ru
Количество: